N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227 IXYS IXFN132N50P3

RS庫存編號:: 168-4757
製造零件編號:: IXFN132N50P3
製造商:: IXYS

N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227 IXYS IXFN132N50P3

此圖片僅供參考，請參閲產品詳細資訊及規格

8 現貨庫存，可於6工作日發貨。

單價（不含稅）毎管：10 個

TWD1,130.00

(不含稅)

TWD1,186.50

單位	每單位	Per Tube*
10 - 40	TWD1,130.00	TWD11,300.00
50 +	TWD1,096.10	TWD10,961.00

* 參考價格

RS庫存編號:: 168-4757
製造零件編號:: IXFN132N50P3
製造商:: IXYS

IXFN132N50P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

屬性	值
Channel Type	N
Maximum Continuous Drain Current	112 A
Maximum Drain Source Voltage	500 V
Package Type	SOT-227
Series	HiperFET, Polar3
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	39 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.5 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	25.07mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	250 nC @ 10 V
Transistor Material	Si
Length	38.23mm
Minimum Operating Temperature	-55 °C
Height	9.6mm

N-Channel MOSFET, 112 A, 500 V, 4-Pin SOT-227 IXYS IXFN132N50P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series