N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXYS IXFX120N30P3
- RS庫存編號:
- 168-4745
- 製造零件編號:
- IXFX120N30P3
- 製造商:
- IXYS
當前暫無庫存，可於02/05/2025發貨，6 工作日送達。
單價（不含稅） 毎管：30 個
TWD518.60
(不含稅)
TWD544.53
(含稅)
單位 | 每單位 | Per Tube* |
|---|---|---|
| 30 - 30 | TWD518.60 | TWD15,558.00 |
| 60 - 90 | TWD507.30 | TWD15,219.00 |
| 120 + | TWD496.00 | TWD14,880.00 |
* 參考價格
- RS庫存編號:
- 168-4745
- 製造零件編號:
- IXFX120N30P3
- 製造商:
- IXYS
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- US
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 120 A |
| Maximum Drain Source Voltage | 300 V |
| Package Type | PLUS247 |
| Series | HiperFET, Polar3 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 27 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.13 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 5.21mm |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V |
| Length | 16.13mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Height | 21.34mm |
| Minimum Operating Temperature | -55 °C |