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MOSFETs
N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXYS IXFP10N80P
RS庫存編號:
168-4482
製造零件編號:
IXFP10N80P
製造商:
IXYS
此圖片僅供參考,請參閲產品詳細資訊及規格
查看所有MOSFETs
34 現貨庫存,可於6工作日發貨。
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單價(不含稅) 毎管:50 個
TWD153.50
(不含稅)
TWD161.18
(含稅)
單位
每單位
Per Tube*
50 - 200
TWD153.50
TWD7,675.00
250 +
TWD138.20
TWD6,910.00
* 參考價格
RS庫存編號:
168-4482
製造零件編號:
IXFP10N80P
製造商:
IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
IXFP 10N80P PolarHV HiPerFET Power MOSFET Data Sheet
ESD Control Selection Guide V1
相容
符合聲明
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
屬性
值
Channel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.83mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Length
10.66mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.15mm