- RS庫存編號:
- 166-1838
- 製造零件編號:
- FDT86113LZ
- 製造商:
- onsemi
當前暫無庫存,可於05/06/2024發貨,6 工作日送達。
已增加
單價(不含稅) 個 (在毎卷:4000)
TWD13.70
(不含稅)
TWD14.38
(含稅)
單位 | Per unit | Per Reel* |
4000 - 16000 | TWD13.70 | TWD54,800.00 |
20000 + | TWD13.00 | TWD52,000.00 |
* 參考價格 |
- RS庫存編號:
- 166-1838
- 製造零件編號:
- FDT86113LZ
- 製造商:
- onsemi
法例與合規
產品詳細資訊
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
規格
屬性 | 值 |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 3.3 A |
Maximum Drain Source Voltage | 100 V |
Package Type | SOT-223 |
Series | PowerTrench |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 189 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 2.2 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 3.7mm |
Typical Gate Charge @ Vgs | 4.1 nC @ 10 V |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Width | 6.7mm |
Number of Elements per Chip | 1 |
Height | 1.7mm |
Minimum Operating Temperature | -55 °C |