SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0065090J

RS庫存編號:: 162-9713
製造零件編號:: C3M0065090J
製造商:: Wolfspeed

SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0065090J

此圖片僅供參考，請參閲產品詳細資訊及規格

200 現貨庫存，可於6工作日發貨。

單價（不含稅）毎管：50 個

TWD503.00

(不含稅)

TWD528.15

單位	Per unit	Per Tube*
50 - 200	TWD503.00	TWD25,150.00
250 +	TWD452.70	TWD22,635.00
* 參考價格

RS庫存編號:: 162-9713
製造零件編號:: C3M0065090J
製造商:: Wolfspeed

產品概覽和技術數據資料表

法例與合規

COO (Country of Origin):: CN

產品詳細資訊

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Wolfspeed

規格

屬性	值
Channel Type	N
Maximum Continuous Drain Current	35 A
Maximum Drain Source Voltage	900 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	78 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.1V
Minimum Gate Threshold Voltage	1.8V
Maximum Power Dissipation	113 W
Transistor Configuration	Single
Maximum Gate Source Voltage	+25 V
Typical Gate Charge @ Vgs	30 nC @ 15 V
Transistor Material	SiC
Width	10.99mm
Maximum Operating Temperature	+150 °C
Length	10.23mm
Number of Elements per Chip	1
Forward Diode Voltage	4.4V
Height	4.57mm
Minimum Operating Temperature	-55 °C