SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0160120D

RS庫存編號:: 162-9709
製造零件編號:: C2M0160120D
製造商:: Wolfspeed

SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0160120D

此圖片僅供參考，請參閲產品詳細資訊及規格

390 現貨庫存，可於6工作日發貨。

單價（不含稅）毎管：30 個

TWD442.90

(不含稅)

TWD465.04

單位	Per unit	Per Tube*
30 - 120	TWD442.90	TWD13,287.00
150 +	TWD398.50	TWD11,955.00
* 參考價格

RS庫存編號:: 162-9709
製造零件編號:: C2M0160120D
製造商:: Wolfspeed

產品概覽和技術數據資料表

法例與合規

COO (Country of Origin):: CN

產品詳細資訊

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Wolfspeed

規格

屬性	值
Channel Type	N
Maximum Continuous Drain Current	19 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	196 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	2.4V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-5 V, +20 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	5.21mm
Length	16.13mm
Typical Gate Charge @ Vgs	34 nC @ 20 V, 34 nC @ 5 V
Transistor Material	SiC
Minimum Operating Temperature	-55 °C
Height	21.1mm
Forward Diode Voltage	3.3V