N-Channel MOSFET, 8 A, 650 V, 3-Pin TO-220 IXYS IXTP8N65X2
- RS庫存編號:
- 146-1791
- 製造零件編號:
- IXTP8N65X2
- 製造商:
- IXYS
當前暫無庫存,可於27/01/2025發貨,6 工作日送達。
單價(不含稅) 毎管:50 個
TWD61.10
(不含稅)
TWD64.16
(含稅)
單位 | 每單位 | Per Tube* |
---|---|---|
50 - 200 | TWD61.10 | TWD3,055.00 |
250 + | TWD55.00 | TWD2,750.00 |
* 參考價格
- RS庫存編號:
- 146-1791
- 製造零件編號:
- IXTP8N65X2
- 製造商:
- IXYS
法例與合規
- COO (Country of Origin):
- US
產品詳細資訊
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
屬性 | 值 |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 8 A |
Maximum Drain Source Voltage | 650 V |
Package Type | TO-220 |
Series | X2-Class |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 500 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 150 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Width | 15.9mm |
Transistor Material | Si |
Length | 10.3mm |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 12 nC @ 10 V |
Height | 4.7mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.4V |