N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXYS IXFN80N50P

RS庫存編號:: 194-029P
製造零件編號:: IXFN80N50P
製造商:: IXYS

N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXYS IXFN80N50P

11 現貨庫存，可於6工作日發貨。

單價（不含稅）個 (以每管裝提供)

TWD1,080.00

(不含稅)

TWD1,134.00

單位	每單位
3 +	TWD1,080.00

RS庫存編號:: 194-029P
製造零件編號:: IXFN80N50P
製造商:: IXYS

Datasheet
ESD Control Selection Guide V1

屬性	值
Channel Type	N
Maximum Continuous Drain Current	66 A
Maximum Drain Source Voltage	500 V
Package Type	SOT-227B
Series	HiperFET, Polar
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	700 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	195 nC @ 10 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Number of Elements per Chip	1
Length	38.2mm
Width	25.07mm
Minimum Operating Temperature	-55 °C
Height	9.6mm

N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXYS IXFN80N50P

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series