N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227 IXYS IXFN140N30P

RS庫存編號:: 193-739P
製造零件編號:: IXFN140N30P
製造商:: IXYS

N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227 IXYS IXFN140N30P

10 現貨庫存，可於6工作日發貨。

單價（不含稅）個 (以每管裝提供)

TWD1,062.00

(不含稅)

TWD1,115.10

單位	每單位
3 - 4	TWD1,062.00
5 +	TWD1,046.00

RS庫存編號:: 193-739P
製造零件編號:: IXFN140N30P
製造商:: IXYS

Datasheet
ESD Control Selection Guide V1

屬性	值
Channel Type	N
Maximum Continuous Drain Current	115 A
Maximum Drain Source Voltage	300 V
Series	HiperFET, Polar
Package Type	SOT-227B
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	24 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	700 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	38.2mm
Width	25.07mm
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	185 nC @ 10 V
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	9.6mm

N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227 IXYS IXFN140N30P

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series