N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227 IXYS IXFN140N20P
- RS庫存編號:
- 193-616P
- 製造零件編號:
- IXFN140N20P
- 製造商:
- IXYS
328 現貨庫存，可於6工作日發貨。
單價（不含稅） 個 (以每管裝提供)
TWD881.00
(不含稅)
TWD925.05
(含稅)
單位 | 每單位 |
|---|---|
| 3 + | TWD881.00 |
- RS庫存編號:
- 193-616P
- 製造零件編號:
- IXFN140N20P
- 製造商:
- IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 115 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | SOT-227B |
| Series | HiperFET, Polar |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 18 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 680 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Width | 25.42mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 240 nC @ 10 V |
| Length | 38.23mm |
| Minimum Operating Temperature | -55 °C |
| Height | 9.6mm |