N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXYS IXFH69N30P
- RS庫存編號:
- 193-543P
- 製造零件編號:
- IXFH69N30P
- 製造商:
- IXYS
當前暫無庫存，可於02/05/2025發貨，6 工作日送達。
單價（不含稅） 個 (以每管裝提供)
TWD338.00
(不含稅)
TWD354.90
(含稅)
單位 | 每單位 |
|---|---|
| 8 + | TWD338.00 |
- RS庫存編號:
- 193-543P
- 製造零件編號:
- IXFH69N30P
- 製造商:
- IXYS
法例與合規
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 69 A |
| Maximum Drain Source Voltage | 300 V |
| Package Type | TO-247 |
| Series | HiperFET, Polar |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 49 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 500 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 5.3mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 156 nC @ 10 V |
| Transistor Material | Si |
| Length | 16.26mm |
| Minimum Operating Temperature | -55 °C |
| Height | 21.46mm |