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MOSFETs
N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227 IXYS IXFN102N30P
RS庫存編號:
193-464P
製造零件編號:
IXFN102N30P
製造商:
IXYS
此圖片僅供參考,請參閲產品詳細資訊及規格
查看所有MOSFETs
當前暫無庫存,可於17/01/2025發貨,6 工作日送達。
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單價(不含稅) 個 (以每管裝提供)
TWD864.00
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TWD907.20
(含稅)
單位
每單位
3 - 4
TWD864.00
5 +
TWD852.00
包裝方式:
標準包裝
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RS庫存編號:
193-464P
製造零件編號:
IXFN102N30P
製造商:
IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
IXFN 102N30P PolarHV HiPerFET Power MOSFET Data Sheet
ESD Control Selection Guide V1
相容
符合聲明
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
屬性
值
Channel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
300 V
Series
HiperFET, Polar
Package Type
SOT-227B
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
570 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
38.23mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
224 nC @ 10 V
Width
25.42mm
Height
9.6mm
Minimum Operating Temperature
-55 °C