IXYS, Type N-Channel XPT IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, PCB

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有IGBTs
不可供應
RS 不再對此產品進貨。
RS庫存編號:
920-0993
製造零件編號:
IXA37IF1200HJ
製造商:
IXYS
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

IXYS

Maximum Continuous Collector Current Ic

58A

Product Type

XPT IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

195W

Package Type

ISOPLUS247

Mount Type

PCB

Channel Type

Type N

Pin Count

3

Switching Speed

70ns

Maximum Collector Emitter Saturation Voltage VceSAT

1.8V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

Epoxy meets UL 94V-0, IEC 60747, RoHS

Length

20.6mm

Width

0.1 mm

Series

Planar

Automotive Standard

No

IGBT Discretes, IXYS XPT series


The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)

Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage

Short circuit capability for 10usec

Positive on-state voltage temperature coefficient

Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes

International standard and proprietary high voltage packages

IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

相關連結