Infineon IGW15T120FKSA1, Type N-Channel Power Semiconductor, 30 A 1200 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 914-0211
- 製造零件編號:
- IGW15T120FKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 4 件）*
TWD631.20
(不含稅)
TWD662.76
(含稅)
添加 12 件 件可免費送貨
暫時缺貨
- 從 2027年4月27日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 4 - 4 | TWD157.80 | TWD631.20 |
| 8 - 12 | TWD154.30 | TWD617.20 |
| 16 + | TWD143.50 | TWD574.00 |
* 參考價格
- RS庫存編號:
- 914-0211
- 製造零件編號:
- IGW15T120FKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power Semiconductor | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 110W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC1, Pb-free lead plating, RoHS | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| Energy Rating | 4.1mJ | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power Semiconductor | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 110W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC1, Pb-free lead plating, RoHS | ||
Series TrenchStop | ||
Automotive Standard No | ||
Energy Rating 4.1mJ | ||
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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