Infineon IKW40N120T2FKSA1, Type N-Channel IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

RS庫存編號:: 906-4488
製造零件編號:: IKW40N120T2FKSA1
製造商:: Infineon

Infineon IKW40N120T2FKSA1, Type N-Channel IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

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小計（1 包，共 2 件）*

TWD487.00

(不含稅)

TWD511.36

訂單超過 $1,300.00 免費送貨

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加上 46 件從 2026年3月03日起發貨

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單位	每單位	每包*
2 - 6	TWD243.50	TWD487.00
8 - 14	TWD238.00	TWD476.00
16 +	TWD222.50	TWD445.00

* 參考價格

RS庫存編號:: 906-4488
製造零件編號:: IKW40N120T2FKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	40A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	480W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Switching Speed	1MHz
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2.2V
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	Pb-Free, RoHS, JEDEC
	Series	TrenchStop
	Energy Rating	8.3mJ
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 40A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 480W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Switching Speed 1MHz
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2.2V
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals Pb-Free, RoHS, JEDEC
	Series TrenchStop
	Energy Rating 8.3mJ
	Automotive Standard No

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V

• Very low VCEsat

• Low turn-off losses

• Short tail current

• Low EMI

• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Infineon IKW40N120T2FKSA1, Type N-Channel IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

訂單超過 $1,300.00 免費送貨

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

IGBT Discretes & Modules, Infineon

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