STMicroelectronics, Type N-Channel IGBT, 10 A 600 V, 3-Pin TO-220, Through Hole

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RS庫存編號:
906-2808
製造零件編號:
STGP5H60DF
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Maximum Continuous Collector Current Ic

10A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

88W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.95V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Series

Trench Gate Field Stop

Standards/Approvals

No

Width

4.6 mm

Length

10.4mm

Height

9.15mm

Energy Rating

221mJ

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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