STMicroelectronics STGP5H60DF IGBT, 10 A 600 V, 3-Pin TO-220, Through Hole
- RS庫存編號:
- 906-2808
- 製造零件編號:
- STGP5H60DF
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD292.00
(不含稅)
TWD306.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 100 件準備從其他地點送貨
- 加上 90 件從 2026年1月13日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD29.20 | TWD292.00 |
| 20 - 20 | TWD28.60 | TWD286.00 |
| 30 + | TWD28.10 | TWD281.00 |
* 參考價格
- RS庫存編號:
- 906-2808
- 製造零件編號:
- STGP5H60DF
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current | 10 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 88 W | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 4.6 x 15.75mm | |
| Gate Capacitance | 855pF | |
| Maximum Operating Temperature | +175 °C | |
| Energy Rating | 221mJ | |
| Minimum Operating Temperature | -55 °C | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current 10 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 88 W | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 4.6 x 15.75mm | ||
Gate Capacitance 855pF | ||
Maximum Operating Temperature +175 °C | ||
Energy Rating 221mJ | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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