STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 877-2905P
- 製造零件編號:
- STGW30NC60KD
- 製造商:
- STMicroelectronics
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可享批量折扣
小計 10 件 (以管提供)*
TWD2,248.00
(不含稅)
TWD2,360.40
(含稅)
添加 10 件 件可免費送貨
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單位 | 每單位 |
|---|---|
| 10 - 10 | TWD224.80 |
| 15 + | TWD221.20 |
* 參考價格
- RS庫存編號:
- 877-2905P
- 製造零件編號:
- STGW30NC60KD
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 200 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.75 x 5.15 x 24.45mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 2170pF | |
| Energy Rating | 1435mJ | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 200 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.75 x 5.15 x 24.45mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 2170pF | ||
Energy Rating 1435mJ | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.