STMicroelectronics STGW30NC60KD, Type N-Channel IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 877-2905
- 製造零件編號:
- STGW30NC60KD
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD1,152.00
(不含稅)
TWD1,209.60
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 360 件從 2026年3月12日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD230.40 | TWD1,152.00 |
| 10 - 10 | TWD224.80 | TWD1,124.00 |
| 15 + | TWD221.20 | TWD1,106.00 |
* 參考價格
- RS庫存編號:
- 877-2905
- 製造零件編號:
- STGW30NC60KD
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 60A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 200W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 29ns | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.7V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC Standard JESD97 | |
| Height | 20.15mm | |
| Series | Rugged | |
| Energy Rating | 1435mJ | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current Ic 60A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 200W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 29ns | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.7V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC Standard JESD97 | ||
Height 20.15mm | ||
Series Rugged | ||
Energy Rating 1435mJ | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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