IXYS MMIX1Y100N120C3H1 IGBT, 92 A 1200 V, 24-Pin SMPD, Surface Mount
- RS庫存編號:
- 875-2513
- 製造零件編號:
- MMIX1Y100N120C3H1
- 製造商:
- IXYS
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TWD1,608.00
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TWD1,688.40
(含稅)
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* 參考價格
- RS庫存編號:
- 875-2513
- 製造零件編號:
- MMIX1Y100N120C3H1
- 製造商:
- IXYS
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Maximum Continuous Collector Current | 92 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Maximum Power Dissipation | 400 W | |
| Package Type | SMPD | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 24 | |
| Switching Speed | 20 → 50kHz | |
| Transistor Configuration | Single | |
| Dimensions | 25.3 x 23.3 x 5.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 6000pF | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Maximum Continuous Collector Current 92 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 400 W | ||
Package Type SMPD | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 24 | ||
Switching Speed 20 → 50kHz | ||
Transistor Configuration Single | ||
Dimensions 25.3 x 23.3 x 5.7mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 6000pF | ||
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.