Fairchild Semiconductor, Type N-Channel IGBT, 21 A 430 V, 3-Pin TO-220AB, Through Hole
- RS庫存編號:
- 862-9359P
- 製造零件編號:
- ISL9V3040P3
- 製造商:
- Fairchild Semiconductor
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計 15 件 (以管提供)*
TWD1,383.00
(不含稅)
TWD1,452.15
(含稅)
訂單超過 $1,300.00 免費送貨
正在逐步停售
- 最終 1,075 個，準備發貨
單位 | 每單位 |
|---|---|
| 15 - 20 | TWD92.20 |
| 25 + | TWD90.40 |
* 參考價格
- RS庫存編號:
- 862-9359P
- 製造零件編號:
- ISL9V3040P3
- 製造商:
- Fairchild Semiconductor
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Fairchild Semiconductor | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 21A | |
| Maximum Collector Emitter Voltage Vceo | 430V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 15μs | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | ±10 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | EcoSPARK | |
| Automotive Standard | AEC-Q101 | |
| Energy Rating | 300mJ | |
| 選取全部 | ||
|---|---|---|
品牌 Fairchild Semiconductor | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 21A | ||
Maximum Collector Emitter Voltage Vceo 430V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 15μs | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO ±10 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series EcoSPARK | ||
Automotive Standard AEC-Q101 | ||
Energy Rating 300mJ | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.