IXYS IXDN55N120D1 IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount
- RS庫存編號:
- 804-7616
- 製造零件編號:
- IXDN55N120D1
- 製造商:
- IXYS
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- RS庫存編號:
- 804-7616
- 製造零件編號:
- IXDN55N120D1
- 製造商:
- IXYS
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 450 W | |
| Package Type | SOT-227B | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 4 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 38.2 x 25.07 x 9.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -40 °C | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 450 W | ||
Package Type SOT-227B | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 4 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 38.2 x 25.07 x 9.6mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -40 °C | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.