Toshiba GT30J341,Q(O IGBT, 59 A 600 V, 3-Pin TO-3PN, Through Hole
- RS庫存編號:
- 799-4867
- 製造零件編號:
- GT30J341,Q(O
- 製造商:
- Toshiba
不可供應
RS 不再對此產品進貨。
- RS庫存編號:
- 799-4867
- 製造零件編號:
- GT30J341,Q(O
- 製造商:
- Toshiba
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Maximum Continuous Collector Current | 59 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Maximum Power Dissipation | 230 W | |
| Package Type | TO-3PN | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.5 x 4.5 x 20mm | |
| Maximum Operating Temperature | +175 °C | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Maximum Continuous Collector Current 59 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 230 W | ||
Package Type TO-3PN | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.5 x 4.5 x 20mm | ||
Maximum Operating Temperature +175 °C | ||
- COO (Country of Origin):
- JP
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.