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    Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

    RS庫存編號:
    796-5046
    製造零件編號:
    GT15J341
    製造商:
    Toshiba
    Toshiba

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    當前暫無庫存,可於23/12/2022發貨,6 工作日送達。
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    單價(不含稅) /個 (每包:5個)

    TWD100.40

    (不含稅)

    TWD105.42

    (含稅)

    單位Per unitPer Pack*
    5 - 10TWD100.40TWD502.00
    15 - 20TWD98.80TWD494.00
    25 +TWD97.20TWD486.00
    * 參考價格
    RS庫存編號:
    796-5046
    製造零件編號:
    GT15J341
    製造商:
    Toshiba

    法例與合規


    產品詳細資訊

    IGBT Discretes, Toshiba



    IGBT Discretes & Modules, Toshiba


    The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


    規格

    屬性
    Maximum Continuous Collector Current15 A
    Maximum Collector Emitter Voltage600 V
    Maximum Gate Emitter Voltage±25V
    Maximum Power Dissipation30 W
    Package TypeTO-220SIS
    Mounting TypeThrough Hole
    Channel TypeN
    Pin Count3
    Switching Speed100kHz
    Transistor ConfigurationSingle
    Dimensions10 x 4.5 x 15mm
    Maximum Operating Temperature+150 °C
    當前暫無庫存,可於23/12/2022發貨,6 工作日送達。
    Add to Basket
    單位

    已增加

    單價(不含稅) /個 (每包:5個)

    TWD100.40

    (不含稅)

    TWD105.42

    (含稅)

    單位Per unitPer Pack*
    5 - 10TWD100.40TWD502.00
    15 - 20TWD98.80TWD494.00
    25 +TWD97.20TWD486.00
    * 參考價格