onsemi FGH40N60UFDTU, Type N-Channel IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 759-9273
- 製造零件編號:
- FGH40N60UFDTU
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD132.00
(不含稅)
TWD138.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 31 件準備從其他地點送貨
- 加上 350 件從 2026年3月03日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 7 | TWD132.00 |
| 8 - 14 | TWD129.00 |
| 15 + | TWD128.00 |
* 參考價格
- RS庫存編號:
- 759-9273
- 製造零件編號:
- FGH40N60UFDTU
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 290W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.4V | |
| Maximum Operating Temperature | 150°C | |
| Series | Field Stop | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 290W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.4V | ||
Maximum Operating Temperature 150°C | ||
Series Field Stop | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
相關連結
- onsemi FGH40N60UFDTU IGBT 3-Pin TO-247, Through Hole
- onsemi FGH40N60SMD IGBT 3-Pin TO-247, Through Hole
- onsemi FGH40N60SFDTU IGBT 3-Pin TO-247, Through Hole
- onsemi FGH40T120SMD IGBT 3-Pin TO-247, Through Hole
- onsemi AFGHL40T65SPD IGBT 3-Pin TO-247, Through Hole
- onsemi NGTB40N65FL2WG IGBT 3-Pin TO-247, Through Hole
- onsemi FGH4L40T120LQD IGBT, 80 A 1200 V TO-247
- Infineon IKW40N60H3FKSA1 IGBT 3-Pin TO-247, Through Hole