STMicroelectronics STGE200NB60S, Type N-Channel IGBT, 200 A 600 V, 4-Pin ISOTOP, Clamp

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包裝方式:
RS庫存編號:
686-8348
製造零件編號:
STGE200NB60S
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

200A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

600W

Package Type

ISOTOP

Mount Type

Clamp

Channel Type

Type N

Pin Count

4

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Maximum Operating Temperature

150°C

Length

38.2mm

Series

Powermesh

Standards/Approvals

ECOPACK, JESD97

Height

12.2mm

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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