onsemi NXH80T120L3Q0S3G IGBT Module 1200 V Q0PACK - Case 180AB, Surface
- RS庫存編號:
- 245-6993
- 製造零件編號:
- NXH80T120L3Q0S3G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
暫時無法供應
我們無法確定此產品何時有貨，RS 預計將其從我們的產品目錄中移除。
- RS庫存編號:
- 245-6993
- 製造零件編號:
- NXH80T120L3Q0S3G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 4 | |
| Maximum Power Dissipation Pd | 188W | |
| Package Type | Q0PACK - Case 180AB | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 13.9mm | |
| Standards/Approvals | RoHS | |
| Length | 55.2mm | |
| Width | 32.8 mm | |
| Series | NXH80T120L3Q0S3G | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 4 | ||
Maximum Power Dissipation Pd 188W | ||
Package Type Q0PACK - Case 180AB | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 13.9mm | ||
Standards/Approvals RoHS | ||
Length 55.2mm | ||
Width 32.8 mm | ||
Series NXH80T120L3Q0S3G | ||
Automotive Standard No | ||
The ON Semiconductor Q0PACK Module is a power module containing a T type neutral point clamped three level inverter stage. The integrated field stop trench IGBTs and fast recovery diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
Low Switching Loss
Low VCESAT
Compact 65.9 mm x 32.5 mm x 12 mm Package
Options with Pre applied Thermal Interface Material and without Pre applied TIM
Options with Solderable Pins and Press fit Pins thermistor