onsemi IGBT Module 1000 V Q2PACK, Surface
- RS庫存編號:
- 245-6975
- 製造零件編號:
- NXH350N100H4Q2F2S1G
- 製造商:
- onsemi
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- RS庫存編號:
- 245-6975
- 製造零件編號:
- NXH350N100H4Q2F2S1G
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1000V | |
| Number of Transistors | 4 | |
| Maximum Power Dissipation Pd | 592W | |
| Package Type | Q2PACK | |
| Mount Type | Surface | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 93.1mm | |
| Height | 12.3mm | |
| Standards/Approvals | RoHS | |
| Series | NXH350N100H4Q2F2S1G | |
| Width | 47.3 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1000V | ||
Number of Transistors 4 | ||
Maximum Power Dissipation Pd 592W | ||
Package Type Q2PACK | ||
Mount Type Surface | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 93.1mm | ||
Height 12.3mm | ||
Standards/Approvals RoHS | ||
Series NXH350N100H4Q2F2S1G | ||
Width 47.3 mm | ||
Automotive Standard No | ||
Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Solder pins
The ON Semiconductor Three Level NPC Q2 pack module is a high density, integrated power module combines high performance IGBTs with rugged anti parallel diodes.
Extremely efficient trench with field stop technology
Low switching loss reduces system power dissipation
Module design offers high power density
Low inductive layout
Low package height
These devices are Pb free, Halogen Free,BFR Free and are RoHS Compliant