Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B
- RS庫存編號:
- 222-4801
- 製造零件編號:
- FP50R12W2T7B11BOMA1
- 製造商:
- Infineon
可享批量折扣
小計(1 托盤,共 15 件)*
TWD23,506.50
(不含稅)
TWD24,681.90
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年3月23日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 15 - 30 | TWD1,567.10 | TWD23,506.50 |
| 45 + | TWD1,520.10 | TWD22,801.50 |
* 參考價格
- RS庫存編號:
- 222-4801
- 製造零件編號:
- FP50R12W2T7B11BOMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Maximum Power Dissipation | 20 mW | |
| Package Type | AG-EASY2B | |
| Channel Type | N | |
| Transistor Configuration | Common Emitter | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage 20V | ||
Maximum Power Dissipation 20 mW | ||
Package Type AG-EASY2B | ||
Channel Type N | ||
Transistor Configuration Common Emitter | ||
The Infineon EasyPIM™ 2B 1200 V, 50 A three phase input rectifier PIM (Power Integrated Modules) IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, NTC and PressFIT contact technology.
Low VCEsat
TRENCHSTOP™ IGBT7
Overload operation up to 175°C
2.5 kV AC 1min insulation
Al2O3 substrate with low thermal resistance
High power density
Compact design
PressFIT contact technology
TRENCHSTOP™ IGBT7
Overload operation up to 175°C
2.5 kV AC 1min insulation
Al2O3 substrate with low thermal resistance
High power density
Compact design
PressFIT contact technology
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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