Infineon, Type N-Channel IGBT, 50 A 1200 V, 31-Pin AG-EASY2B, Through Hole
- RS庫存編號:
- 222-4801
- 製造零件編號:
- FP50R12W2T7B11BOMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 托盤，共 15 件）*
TWD23,506.50
(不含稅)
TWD24,681.90
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月26日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 15 - 30 | TWD1,567.10 | TWD23,506.50 |
| 45 + | TWD1,520.10 | TWD22,801.50 |
* 參考價格
- RS庫存編號:
- 222-4801
- 製造零件編號:
- FP50R12W2T7B11BOMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 20mW | |
| Package Type | AG-EASY2B | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 31 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 56.7mm | |
| Standards/Approvals | No | |
| Height | 16.4mm | |
| Series | FP50R12W2T7_B11 | |
| Width | 48 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 20mW | ||
Package Type AG-EASY2B | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 31 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 56.7mm | ||
Standards/Approvals No | ||
Height 16.4mm | ||
Series FP50R12W2T7_B11 | ||
Width 48 mm | ||
Automotive Standard No | ||
The Infineon EasyPIM™ 2B 1200 V, 50 A three phase input rectifier PIM (Power Integrated Modules) IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, NTC and PressFIT contact technology.
Low VCEsat
TRENCHSTOP™ IGBT7
Overload operation up to 175°C
2.5 kV AC 1min insulation
Al2O3 substrate with low thermal resistance
High power density
Compact design
PressFIT contact technology
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