Infineon IKW75N65EH5XKSA1, Type N-Channel IGBT, 90 A 650 V, 3-Pin TO-247, Through Hole

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小計(1 包,共 2 件)*

TWD363.00

(不含稅)

TWD381.16

(含稅)

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2 - 8TWD181.50TWD363.00
10 - 98TWD177.00TWD354.00
100 - 248TWD173.00TWD346.00
250 - 498TWD168.50TWD337.00
500 +TWD156.00TWD312.00

* 參考價格

包裝方式:
RS庫存編號:
215-6675
製造零件編號:
IKW75N65EH5XKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

90A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

395W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Operating Temperature

175°C

Length

41.42mm

Width

16.13 mm

Series

High Speed Fifth Generation

Standards/Approvals

JEDEC

Automotive Standard

No

The Infineon insulated-gate bipolar transistor with high speed H5 technology.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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