Infineon IKW75N65EH5XKSA1, Type N-Channel IGBT, 90 A 650 V, 3-Pin TO-247, Through Hole

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TWD564.00

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TWD592.20

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2 - 8TWD282.00TWD564.00
10 - 98TWD275.00TWD550.00
100 - 248TWD268.50TWD537.00
250 - 498TWD262.00TWD524.00
500 +TWD242.00TWD484.00

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包裝方式:
RS庫存編號:
215-6675
製造零件編號:
IKW75N65EH5XKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current Ic

90A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

395W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC

Series

High Speed Fifth Generation

Length

41.42mm

Automotive Standard

No

Infineon High Speed Fifth Generation Series IGBT, 650V Max Collector Emitter Voltage, 90A Max Continuous Collector Current - IKW75N65EH5XKSA1


This IGBT is a power-switching device designed for high-voltage, high-current applications in industrial electronics. It combines rapid switching capability with robust voltage handling to support inverter and motor-drive topologies. The component is supplied in a through-hole TO-247 package and is manufactured to JEDEC standards for consistent electrical characteristics.

Features and Benefits:


• 650V Vceo rating enables high-voltage inverter designs
• 90A continuous collector current supports heavy motor loads
• 1.65V Vcesat minimises conduction losses at high current
• ±30V gate tolerance allows flexible drive voltages
• 395W power dissipation permits sustained thermal loading
• -40°C to 175°C operating range suits elevated-temperature environments

Applications


• Suitable for industrial motor-drive power stages
• Ideal for three-phase inverter output transistors
• Used with power supplies requiring high-current switching
• Can be used for traction and heavy-duty drive assemblies
• Suitable for through-hole prototyping and PCB-mounted modules

What package characteristics affect thermal transfer?


The TO-247 format provides a large metal backing for heatsink attachment and through-hole leads for secure mounting, allowing efficient conduction of dissipated power to external cooling.

How does the gate voltage limit influence driver selection?


With a maximum gate-emitter rating of ±30V, drivers must keep gate amplitude within this range to prevent device stress while providing adequate drive for fast switching transitions.

What considerations apply for parallel operation of multiple devices?


When sharing current across units, ensure matched Vcesat characteristics and individual gate-drive control

adequate thermal management is required to prevent thermal runaway under unequal load sharing.

How does the device perform under high ambient temperatures?


The specified operating range to 175°C indicates suitability for high-temperature environments, but system-level thermal design must maintain junction temperatures within safe limits given the 395W dissipation capacity.

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