Infineon, Type N-Channel Resonant Switching, 80 A 1200 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 215-6640
- 製造零件編號:
- IHW40N120R5XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD2,067.00
(不含稅)
TWD2,170.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,100 件從 2026年3月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 60 | TWD68.90 | TWD2,067.00 |
| 90 - 120 | TWD66.10 | TWD1,983.00 |
| 150 + | TWD61.20 | TWD1,836.00 |
* 參考價格
- RS庫存編號:
- 215-6640
- 製造零件編號:
- IHW40N120R5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | Resonant Switching | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 394W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Width | 16.13 mm | |
| Series | IHW40N120R5 | |
| Length | 42mm | |
| Standards/Approvals | Pb-free lead plating, IEC61249-2-21, RoHS, JESD-022 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type Resonant Switching | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 394W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Width 16.13 mm | ||
Series IHW40N120R5 | ||
Length 42mm | ||
Standards/Approvals Pb-free lead plating, IEC61249-2-21, RoHS, JESD-022 | ||
Automotive Standard No | ||
The Infineon insulated-gate bipolar transistor with powerful monolithic body diode with low forward voltage designed for soft commutation.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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