STMicroelectronics, Type N-Channel IGBT, 115 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 206-7212P
- 製造零件編號:
- STGWA75H65DFB2
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計 8 件 (以管提供)*
TWD1,156.00
(不含稅)
TWD1,213.76
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 20 件從 2026年3月23日 起裝運發貨
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單位 | 每單位 |
|---|---|
| 8 + | TWD144.50 |
* 參考價格
- RS庫存編號:
- 206-7212P
- 製造零件編號:
- STGWA75H65DFB2
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 115A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 357W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 15.9mm | |
| Series | STG | |
| Width | 21.1 mm | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 115A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 357W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 15.9mm | ||
Series STG | ||
Width 21.1 mm | ||
Height 5.1mm | ||
Automotive Standard No | ||
The STMicroelectronics Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package.
Maximum junction temperature: TJ = 175 °C
Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient