Vishay SI7489DP-T1-E3, Type P-Channel IGBT, 8-Pin PowerPAK SO-8, Surface

RS庫存編號:: 180-7802
製造零件編號:: SI7489DP-T1-E3
製造商:: Vishay

Vishay SI7489DP-T1-E3, Type P-Channel IGBT, 8-Pin PowerPAK SO-8, Surface

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小計（1 包，共 5 件）*

TWD486.00

(不含稅)

TWD510.30

訂單超過 $1,300.00 免費送貨

正在逐步停售

25 件準備從其他地點送貨
最終 245 件從 2026年5月21日起發貨

單位	每單位	每包*
5 - 745	TWD97.20	TWD486.00
750 - 1495	TWD94.80	TWD474.00
1500 +	TWD93.20	TWD466.00

* 參考價格

RS庫存編號:: 180-7802
製造零件編號:: SI7489DP-T1-E3
製造商:: Vishay

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	IGBT
	Maximum Power Dissipation Pd	83W
	Package Type	PowerPAK SO-8
	Mount Type	Surface
	Channel Type	Type P
	Pin Count	8
	Maximum Gate Emitter Voltage VGEO	50 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	6.25mm
	Standards/Approvals	IEC 61249-2-21
	Height	1.12mm
	Energy Rating	61mJ
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type IGBT
	Maximum Power Dissipation Pd 83W
	Package Type PowerPAK SO-8
	Mount Type Surface
	Channel Type Type P
	Pin Count 8
	Maximum Gate Emitter Voltage VGEO 50 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 6.25mm
	Standards/Approvals IEC 61249-2-21
	Height 1.12mm
	Energy Rating 61mJ
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel SO-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 41mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 83W and continuous drain current of 28A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• New low thermal resistance PowerPAK package with low 1.07mm profile

• Operating temperature ranges between -55°C and 150°C

• PWM optimised

• TrenchFET power MOSFET

Applications

• Half-bridge motor drives

• High voltage non-synchronous buck converters

• Load switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21