Toshiba, Type N-Channel Insulated Gate Bipolar Transistor, 30 A 600 V, 3-Pin TO-3P, Through Hole
- RS庫存編號:
- 168-7766
- 製造零件編號:
- GT30J121
- 製造商:
- Toshiba
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可享批量折扣
小計（1 管，共 50 件）*
TWD5,990.00
(不含稅)
TWD6,289.50
(含稅)
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單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 200 | TWD119.80 | TWD5,990.00 |
| 250 + | TWD107.80 | TWD5,390.00 |
* 參考價格
- RS庫存編號:
- 168-7766
- 製造零件編號:
- GT30J121
- 製造商:
- Toshiba
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Product Type | Insulated Gate Bipolar Transistor | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 170W | |
| Package Type | TO-3P | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.45V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Product Type Insulated Gate Bipolar Transistor | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 170W | ||
Package Type TO-3P | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.45V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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