Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole
- RS庫存編號:
- 110-9135
- 製造零件編號:
- 7MBR50VB-120-50
- 製造商:
- Fuji Electric
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小計（1 件）*
TWD4,442.00
(不含稅)
TWD4,664.10
(含稅)
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單位 | 每單位 |
|---|---|
| 1 + | TWD4,442.00 |
* 參考價格
- RS庫存編號:
- 110-9135
- 製造零件編號:
- 7MBR50VB-120-50
- 製造商:
- Fuji Electric
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Fuji Electric | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 280 W | |
| Configuration | 3 Phase Bridge | |
| Package Type | M712 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 24 | |
| Transistor Configuration | 3 Phase | |
| Dimensions | 122 x 62 x 17mm | |
| Maximum Operating Temperature | +150 °C | |
| 選取全部 | ||
|---|---|---|
品牌 Fuji Electric | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 280 W | ||
Configuration 3 Phase Bridge | ||
Package Type M712 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 24 | ||
Transistor Configuration 3 Phase | ||
Dimensions 122 x 62 x 17mm | ||
Maximum Operating Temperature +150 °C | ||
IGBT Modules 7-Pack, Fuji Electric
V-Series
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.