Infineon IGQ75N120S7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 75 A 1200 V, 3-Pin PG-TO247-3-PLUS-N,

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RS庫存編號:
284-979
製造零件編號:
IGQ75N120S7XKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

630 W

Configuration

Single Collector, Single Emitter, Single Gate

Package Type

PG-TO247-3-PLUS-N

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

The Infineon IGBT is designed to operate efficiently at 1200 V while ensuring robust performance in demanding applications. Featuring cutting edge trench technology, this device excels in handling high current levels of up to 75 A, making it ideal for industrial power supplies and renewable energy systems such as solar inverters. The meticulous design ensures low saturation voltage and significant dv/dt controllability, enhancing the reliability and efficiency of power conversion systems. With a strong emphasis on durability, this IGBT is validated for industrial applications according to stringent JEDEC standards, ensuring it meets the rigorous demands of modern electronics.

Designed with trench technology for efficiency
Short circuit ruggedness ensures reliable performance
Wide temperature range for diverse applications
Reduced switching losses enhance thermal management
Optimized for high performance industrial use
Comprehensive PSpice models for easy integration
Low gate charge enables faster switching speeds

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