Infineon IGQ120N120S7XKSA1, Type N-Channel IGBT, 216 A 1200 V, 3-Pin PG-TO-247-3-PLUS-N, Through Hole

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包裝方式：
RS庫存編號:
284-978
製造零件編號:
IGQ120N120S7XKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

216A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

1kW

Package Type

PG-TO-247-3-PLUS-N

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 60068, IEC 60749, IEC 60747

Width

15.9 mm

Length

20.1mm

Height

5.1mm

Automotive Standard

No

The Infineon IGBT is a cutting edge power semiconductor designed for high performance applications. With its Advanced trench technology, this IGBT delivers exceptional ruggedness and reliability. Capable of withstanding short circuits for up to 8 microseconds, it is engineered for demanding environments such as industrial power supplies and renewable energy systems. The device operates at a collector emitter voltage of up to 1200 V and supports continuous collector currents of 120 A. Enhanced thermal performance is achieved through low thermal resistance, making it a favourite among engineers seeking efficiency and performance in their designs.

Optimized for high thermal dissipation

Handles brief short circuits reliably

Wide dv/dt controllability for flexibility

Conforms to industrial standards for robustness

Delivers low saturation voltage for efficiency

Offers a spectrum of models for applications

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