Infineon IKZA50N120CH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 82 A 1200 V, 4-Pin
- RS庫存編號:
- 284-620
- 製造零件編號:
- IKZA50N120CH7XKSA1
- 製造商:
- Infineon
不可供應
RS 不再對此產品進貨。
- RS庫存編號:
- 284-620
- 製造零件編號:
- IKZA50N120CH7XKSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 82 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 115 W | |
| Configuration | Single Collector, Single Emitter, Single Gate | |
| Package Type | PG-TO247-4-STD-NT3.7 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 4 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 82 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 115 W | ||
Configuration Single Collector, Single Emitter, Single Gate | ||
Package Type PG-TO247-4-STD-NT3.7 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 4 | ||
The Infineon IGBT features a Hard switching 1200 V, 50 A TRENCHSTOP IGBT7 H7 discrete in TO 247 4pin package technology has been developed to fulfil the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
Optimized performance in application conditions
Lowest conduction losses
Lowest switching losses
Humidity robustness under harsh environment
Improved EMI performance
Fast switching behaviour with low EMI emissions
Lowest conduction losses
Lowest switching losses
Humidity robustness under harsh environment
Improved EMI performance
Fast switching behaviour with low EMI emissions