Infineon IRS21834STRPBF, Gate Driver 625 V, SOIC-14N

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小計(1 包,共 2 件)*

TWD104.00

(不含稅)

TWD109.20

(含稅)

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單位
每單位
每包*
2 - 8TWD52.00TWD104.00
10 - 98TWD46.50TWD93.00
100 - 248TWD44.00TWD88.00
250 - 498TWD38.00TWD76.00
500 +TWD37.00TWD74.00

* 參考價格

包裝方式:
RS庫存編號:
258-4012
製造零件編號:
IRS21834STRPBF
製造商:
Infineon
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品牌

Infineon

Product Type

Gate Driver Module

Package Type

SOIC-14N

Fall Time

35ns

Driver Type

Gate Driver

Rise Time

40ns

Minimum Supply Voltage

3.3V

Maximum Supply Voltage

625V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Automotive Standard

No

The Infineon half bridge driver are high voltage, high speed power MOSFET and IGBT drivers with dependent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.

Gate drive supply range from 10 V to 20 V

Under voltage lockout for both channels

3.3 V and 5 V input logic compatible

Matched propagation delay for both channels

Logic and power ground +/- 5 V offset

Lower di/dt gate driver for better noise immunity

Output source/sink current capability 1.4 A/1.8 A

RoHS compliant

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