Infineon MOSFET Gate Driver, 1.8 A 8-Pin 625 V, SOIC

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小計(1 卷,共 2500 件)*

TWD104,000.00

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TWD109,200.00

(含稅)

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  • 2026年6月17日 發貨
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2500 - 2500TWD41.60TWD104,000.00
5000 +TWD40.30TWD100,750.00

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RS庫存編號:
258-3942
製造零件編號:
IR2183STRPBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Output Current

1.8A

Pin Count

8

Package Type

SOIC

Fall Time

20ns

Driver Type

MOSFET

Rise Time

40ns

Minimum Supply Voltage

-0.3V

Maximum Supply Voltage

625V

Minimum Operating Temperature

-50°C

Maximum Operating Temperature

150°C

Series

IR21xx

Standards/Approvals

No

Automotive Standard

No

The Infineon half bridge driver are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Gate drive supply range from 10 to 20V

Under voltage lockout for both channels

3.3V and 5V input logic compatible

Matched propagation delay for both channels

Logic and power ground +/- 5V offset.

Lower di/dt gate driver for better noise immunity

Output source/sink current capability 1.4A/1.8A

Also available LEAD-FREE

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