Infineon, Half Bridge, 420 mA 8-Pin 600 V, SOIC

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可享批量折扣

小計(1 卷,共 2500 件)*

TWD60,500.00

(不含稅)

TWD63,525.00

(含稅)

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  • 2026年6月16日 發貨
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每單位
每卷*
2500 - 2500TWD24.20TWD60,500.00
5000 +TWD23.40TWD58,500.00

* 參考價格

RS庫存編號:
258-3930
製造零件編號:
IR2111STRPBF
製造商:
Infineon
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品牌

Infineon

Product Type

Gate Driver Module

Output Current

420mA

Pin Count

8

Fall Time

40ns

Package Type

SOIC

Driver Type

Half Bridge

Rise Time

130ns

Minimum Supply Voltage

10V

Maximum Supply Voltage

600V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Series

IR2111(S) & (PbF)

Standards/Approvals

No

Automotive Standard

No

The Infineon half-bridge driver is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Gate drive supply range from 10 to 20V

Under voltage lockout for both channels

CMOS Schmitt-triggered inputs with pull-down

Matched propagation delay for both channels

Internally set dead time

High side output in phase with input

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