Infineon 2ED2388S06FXUMA1, Isolated Gate Driver 1, 1 A 8-Pin 20 V, DSO-8
- RS庫存編號:
- 349-170
- 製造零件編號:
- 2ED2388S06FXUMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 10 件）*
TWD346.00
(不含稅)
TWD363.30
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,500 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 90 | TWD34.60 | TWD346.00 |
| 100 - 240 | TWD32.80 | TWD328.00 |
| 250 - 490 | TWD30.40 | TWD304.00 |
| 500 - 990 | TWD28.00 | TWD280.00 |
| 1000 + | TWD27.00 | TWD270.00 |
* 參考價格
- RS庫存編號:
- 349-170
- 製造零件編號:
- 2ED2388S06FXUMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Gate Driver IC | |
| Output Current | 1A | |
| Pin Count | 8 | |
| Fall Time | 70ns | |
| Package Type | DSO-8 | |
| Number of Outputs | 2 | |
| Driver Type | Isolated Gate Driver | |
| Rise Time | 70ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS | |
| Length | 4.9mm | |
| Width | 3.9 mm | |
| Series | 2ED2388S06F | |
| Height | 1.75mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Gate Driver IC | ||
Output Current 1A | ||
Pin Count 8 | ||
Fall Time 70ns | ||
Package Type DSO-8 | ||
Number of Outputs 2 | ||
Driver Type Isolated Gate Driver | ||
Rise Time 70ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS | ||
Length 4.9mm | ||
Width 3.9 mm | ||
Series 2ED2388S06F | ||
Height 1.75mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The Infineon 650 V Half bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs. Based on our SOI-technology, its offer excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.
Negative VS transient immunity of 100 V
Integrated ultra fast and low resistance bootstrap diode
90 ns propagation delay
Floating channel designed for bootstrap operation
Independent under voltage lockout for both channels