Infineon 2ED2388S06FXUMA1, Isolated Gate Driver 1, 1 A 8-Pin 20V, DSO-8
- RS庫存編號:
- 349-170
- 製造零件編號:
- 2ED2388S06FXUMA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計(1 包,共 10 件)*
TWD379.00
(不含稅)
TWD398.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 90 | TWD37.90 | TWD379.00 |
| 100 - 240 | TWD35.90 | TWD359.00 |
| 250 - 490 | TWD33.30 | TWD333.00 |
| 500 - 990 | TWD30.70 | TWD307.00 |
| 1000 + | TWD29.60 | TWD296.00 |
* 參考價格
- RS庫存編號:
- 349-170
- 製造零件編號:
- 2ED2388S06FXUMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Gate Driver IC | |
| Output Current | 1A | |
| Pin Count | 8 | |
| Package Type | DSO-8 | |
| Fall Time | 70ns | |
| Driver Type | Isolated Gate Driver | |
| Number of Outputs | 2 | |
| Rise Time | 70ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 4.9mm | |
| Standards/Approvals | RoHS | |
| Width | 3.9mm | |
| Series | 2ED2388S06F | |
| Height | 1.75mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Gate Driver IC | ||
Output Current 1A | ||
Pin Count 8 | ||
Package Type DSO-8 | ||
Fall Time 70ns | ||
Driver Type Isolated Gate Driver | ||
Number of Outputs 2 | ||
Rise Time 70ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Length 4.9mm | ||
Standards/Approvals RoHS | ||
Width 3.9mm | ||
Series 2ED2388S06F | ||
Height 1.75mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The Infineon 650 V Half bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs. Based on our SOI-technology, its offer excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.
Negative VS transient immunity of 100 V
Integrated ultra fast and low resistance bootstrap diode
90 ns propagation delay
Floating channel designed for bootstrap operation
Independent under voltage lockout for both channels
相關連結
- Infineon 2EDN7524RXTMA1 DSO
- Infineon 1ED44176N01FXUMA1 MOSFET Gate Driver 1 8-Pin 20V, DSO
- Infineon 2ED2101S06FXUMA1 Gate Driver DSO
- Infineon 2ED21091S06FXUMA1 290 mA 8-Pin 20V, DSO-8
- Infineon 2ED2184S06FXUMA1 2.5 A 8-Pin 20V, DSO
- Infineon 2EDN7534FXTMA1 MOSFET Gate Driver DSO
- Infineon 2EDN8533FXTMA1 MOSFET Gate Driver DSO
- Infineon 2EDN7434FXTMA1 MOSFET Gate Driver DSO
