可享批量折扣
小計（1 管，共 74 件）*
TWD42,779.40
(不含稅)
TWD44,918.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每管* |
|---|---|---|
| 74 - 74 | TWD578.10 | TWD42,779.40 |
| 148 + | TWD565.40 | TWD41,839.60 |
* 參考價格
- RS庫存編號:
- 188-5422
- 製造零件編號:
- FM25V20A-DG
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 2MB | |
| Product Type | FRAM | |
| Organisation | 256k x 8 Bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 16ns | |
| Maximum Clock Frequency | 40MHz | |
| Mount Type | Surface | |
| Package Type | DFN | |
| Pin Count | 8 | |
| Width | 4 mm | |
| Length | 4.5mm | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Maximum Operating Temperature | 85°C | |
| Minimum Supply Voltage | 2V | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Number of Bits per Word | 8 | |
| Number of Words | 256K | |
| Automotive Standard | AEC-Q100 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 2MB | ||
Product Type FRAM | ||
Organisation 256k x 8 Bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 16ns | ||
Maximum Clock Frequency 40MHz | ||
Mount Type Surface | ||
Package Type DFN | ||
Pin Count 8 | ||
Width 4 mm | ||
Length 4.5mm | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Maximum Operating Temperature 85°C | ||
Minimum Supply Voltage 2V | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Number of Bits per Word 8 | ||
Number of Words 256K | ||
Automotive Standard AEC-Q100 | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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