Infineon 16 kB 2 Wire I2C FRAM 8-Pin SOIC, FM24CL16B-G

RS庫存編號:: 125-4212
製造零件編號:: FM24CL16B-G
製造商:: Infineon

Infineon 16 kB 2 Wire I2C FRAM 8-Pin SOIC, FM24CL16B-G

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可享批量折扣

小計（1 包，共 5 件）*

TWD227.00

(不含稅)

TWD238.35

庫存資訊目前無法存取 - 請稍後再回來查看

單位	每單位	每包*
5 - 20	TWD45.40	TWD227.00
25 - 45	TWD44.60	TWD223.00
50 +	TWD43.60	TWD218.00

* 參考價格

RS庫存編號:: 125-4212
製造零件編號:: FM24CL16B-G
製造商:: Infineon

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Memory Size	16kB
	Product Type	FRAM
	Organisation	2K x 8 bit
	Interface Type	2 Wire I2C
	Data Bus Width	8bit
	Maximum Random Access Time	3000ns
	Maximum Clock Frequency	1MHz
	Mount Type	Surface
	Package Type	SOIC
	Pin Count	8
	Width	3.98 mm
	Standards/Approvals	No
	Height	1.38mm
	Length	4.97mm
	Maximum Operating Temperature	85°C
	Number of Bits per Word	8
	Number of Words	2k
	Minimum Supply Voltage	2.7V
	Maximum Supply Voltage	3.65V
	Minimum Operating Temperature	-40°C
	Automotive Standard	AEC-Q100

	選取全部
	品牌 Infineon
	Memory Size 16kB
	Product Type FRAM
	Organisation 2K x 8 bit
	Interface Type 2 Wire I2C
	Data Bus Width 8bit
	Maximum Random Access Time 3000ns
	Maximum Clock Frequency 1MHz
	Mount Type Surface
	Package Type SOIC
	Pin Count 8
	Width 3.98 mm
	Standards/Approvals No
	Height 1.38mm
	Length 4.97mm
	Maximum Operating Temperature 85°C
	Number of Bits per Word 8
	Number of Words 2k
	Minimum Supply Voltage 2.7V
	Maximum Supply Voltage 3.65V
	Minimum Operating Temperature -40°C
	Automotive Standard AEC-Q100

FM24CL16B Datasheet

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 16 kB 2 Wire I2C FRAM 8-Pin SOIC, FM24CL16B-G

FRAM, Cypress Semiconductor

FRAM (Ferroelectric RAM)

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