Infineon NOR 1 GB Parallel GL-T MIRRORBITTM Flash Parallel 48-Pin TSOP-56

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TWD432.00

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TWD453.60

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RS庫存編號:
273-5429
製造零件編號:
S29GL01GT10FHI010
製造商:
Infineon
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品牌

Infineon

Memory Size

1GB

Product Type

GL-T MIRRORBITTM Flash Parallel

Interface Type

Parallel

Package Type

TSOP-56

Pin Count

48

Organisation

120MB

Maximum Clock Frequency

5MHz

Cell Type

NOR

Maximum Supply Voltage

3.6V

Minimum Supply Voltage

2.7V

Timing Type

Asynchronous

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Automotive Standard

AEC-Q100 Grade 2 & 3

Maximum Random Access Time

130ns

Series

S29GL

Supply Current

100mA

Number of Bits per Word

16

The Infineon Flash Memory is fabricated on 45 nm process technology. These devices offer a fast page access time as fast as 15 ns, with a corresponding random access time as fast as 100 ns. They feature a write buffer that allows a maximum of 256 words or 512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms.

20 year data retention

Advanced sector protection

512 byte programming buffer

100000 program and erase cycles

Asynchronous 32 byte page read

Common flash interface parameter table

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