Infineon NOR 16 MB CFI Flash Memory 48-Pin TSOP, S29AL016J70TFI023

RS庫存編號:: 193-8789
製造零件編號:: S29AL016J70TFI023
製造商:: Infineon

Infineon NOR 16 MB CFI Flash Memory 48-Pin TSOP, S29AL016J70TFI023

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可享批量折扣

小計（1 包，共 5 件）*

TWD482.00

(不含稅)

TWD506.10

訂單超過 $1,300.00 免費送貨

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單位	每單位	每包*
5 - 245	TWD96.40	TWD482.00
250 - 495	TWD94.00	TWD470.00
500 +	TWD92.20	TWD461.00

* 參考價格

RS庫存編號:: 193-8789
製造零件編號:: S29AL016J70TFI023
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	Flash Memory
	Memory Size	16MB
	Interface Type	CFI
	Package Type	TSOP
	Pin Count	48
	Organisation	2M x 8 Bit
	Mount Type	Surface
	Cell Type	NOR
	Maximum Supply Voltage	3.6V
	Minimum Supply Voltage	2.7V
	Timing Type	Asynchronous
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	85°C
	Width	12 mm
	Height	1.05mm
	Standards/Approvals	No
	Length	12mm
	Maximum Random Access Time	70ns
	Number of Bits per Word	8
	Supply Current	12mA
	Number of Words	2M
	Series	S29AL016J
	Automotive Standard	AEC-Q100

	選取全部
	品牌 Infineon
	Product Type Flash Memory
	Memory Size 16MB
	Interface Type CFI
	Package Type TSOP
	Pin Count 48
	Organisation 2M x 8 Bit
	Mount Type Surface
	Cell Type NOR
	Maximum Supply Voltage 3.6V
	Minimum Supply Voltage 2.7V
	Timing Type Asynchronous
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 85°C
	Width 12 mm
	Height 1.05mm
	Standards/Approvals No
	Length 12mm
	Maximum Random Access Time 70ns
	Number of Bits per Word 8
	Supply Current 12mA
	Number of Words 2M
	Series S29AL016J
	Automotive Standard AEC-Q100

Datasheet S29AL016J70TFI013

COO (Country of Origin):: TH

The S29AL016J is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball Fine-pitch BGA (0.8 mm pitch), 64-ball Fortified BGA (1.0 mm pitch) and 48pin TSOP packages. The word-wide data (x16)appears on DQ15–DQ0, the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers.

The device offers access time of 55 ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.

Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four.

Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7(Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command.

Infineon NOR 16 MB CFI Flash Memory 48-Pin TSOP, S29AL016J70TFI023

訂單超過 $1,300.00 免費送貨

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