Winbond SLC NAND 1Gbit Parallel Flash Memory 63-Pin VFBGA, W29N01HZBINA

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小計 55 件 (以盤裝提供)*

TWD8,415.00

(不含稅)

TWD8,835.75

(含稅)

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包裝方式:
RS庫存編號:
188-2785P
製造零件編號:
W29N01HZBINA
製造商:
Winbond
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品牌

Winbond

Memory Size

1Gbit

Interface Type

Parallel

Package Type

VFBGA

Pin Count

63

Organisation

128M x 8 bit

Mounting Type

Surface Mount

Cell Type

SLC NAND

Minimum Operating Supply Voltage

1.7 V

Maximum Operating Supply Voltage

1.95 V

Block Organisation

Symmetrical

Length

11.1mm

Height

0.6mm

Width

9.1mm

Dimensions

11.1 x 9.1 x 0.6mm

Series

W29N

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+85 °C

Maximum Random Access Time

25µs

Number of Words

128M

Number of Bits per Word

8bit

COO (Country of Origin):
TW
Density : 1Gbit (Single chip solution)
Vcc : 1.7V to 1.95V
Bus width : x8 x16
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 1G-bit/128M-byte
Page size
2,112 bytes (2048 + 64 bytes)
1,056 words (1024 + 32 words)
Block size
64 pages (128K + 4K bytes)
64 pages (64K + 2K words)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command s
Additional command support
Copy Back
Lowest power consumption
Read: 13 mA(typ.)
Program/Erase:10mA(typ)
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
48-ball VFBGA
63-ball VFBGA
68-ball WLCSP

1Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.