Toshiba NAND 1 Gbyte Parallel Flash Memory 48-Pin TSOP, TC58NVG0S3ETAI0
- RS庫存編號:
- 168-4147
- 製造零件編號:
- TC58NVG0S3ETAI0
- 製造商:
- Toshiba
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- RS庫存編號:
- 168-4147
- 製造零件編號:
- TC58NVG0S3ETAI0
- 製造商:
- Toshiba
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Memory Size | 1 Gbyte | |
| Interface Type | Parallel | |
| Package Type | TSOP | |
| Pin Count | 48 | |
| Organisation | 128M x 8 | |
| Mounting Type | Surface Mount | |
| Cell Type | NAND | |
| Minimum Operating Supply Voltage | -0.6 V | |
| Maximum Operating Supply Voltage | 4.6 V | |
| Block Organisation | Symmetrical | |
| Dimensions | 18.4 x 12.4 x 1mm | |
| Maximum Random Access Time | 25ns | |
| Maximum Operating Temperature | +85 °C | |
| Number of Words | 128M | |
| Minimum Operating Temperature | -40 °C | |
| Number of Bits per Word | 8bit | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Memory Size 1 Gbyte | ||
Interface Type Parallel | ||
Package Type TSOP | ||
Pin Count 48 | ||
Organisation 128M x 8 | ||
Mounting Type Surface Mount | ||
Cell Type NAND | ||
Minimum Operating Supply Voltage -0.6 V | ||
Maximum Operating Supply Voltage 4.6 V | ||
Block Organisation Symmetrical | ||
Dimensions 18.4 x 12.4 x 1mm | ||
Maximum Random Access Time 25ns | ||
Maximum Operating Temperature +85 °C | ||
Number of Words 128M | ||
Minimum Operating Temperature -40 °C | ||
Number of Bits per Word 8bit | ||
- COO (Country of Origin):
- JP
Flash Memory, Toshiba
Flash Memory
FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.