Infineon Low Noise Silicon Bipolar RF Transistor, 20 mA, 20 V, 3-Pin SOT-323
- RS庫存編號:
- 273-7307
- 製造零件編號:
- BFR93AWH6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 50 件）*
TWD275.00
(不含稅)
TWD289.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 13,500 件從 2026年5月04日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 50 | TWD5.50 | TWD275.00 |
| 100 - 200 | TWD5.30 | TWD265.00 |
| 250 - 450 | TWD5.20 | TWD260.00 |
| 500 - 950 | TWD5.00 | TWD250.00 |
| 1000 + | TWD4.90 | TWD245.00 |
* 參考價格
- RS庫存編號:
- 273-7307
- 製造零件編號:
- BFR93AWH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Low Noise Silicon Bipolar RF Transistor | |
| Maximum DC Collector Current Idc | 20mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Power Dissipation Pd | 300mW | |
| Minimum Operating Temperature | -65°C | |
| Maximum Transition Frequency ft | 6GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Standards/Approvals | AEC-Q101 | |
| Series | BFR93AW | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Low Noise Silicon Bipolar RF Transistor | ||
Maximum DC Collector Current Idc 20mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Power Dissipation Pd 300mW | ||
Minimum Operating Temperature -65°C | ||
Maximum Transition Frequency ft 6GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Standards/Approvals AEC-Q101 | ||
Series BFR93AW | ||
Automotive Standard AEC-Q101 | ||
The Infineon Silicon Bipolar RF Transistor is designed for low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA. This RF transistor has qualification report according to AEC Q101.
Halogen free
Pb free package
RoHS compliant
With visible leads
相關連結
- Infineon BFR93AWH6327XTSA1 Low Noise Silicon Bipolar RF Transistor 20 V, 3-Pin SOT-323
- Infineon Low Noise Silicon Bipolar RF Transistor 20 V, 4-Pin SOT-143
- Infineon BFP183E7764HTSA1 Low Noise Silicon Bipolar RF Transistor 20 V, 4-Pin SOT-143
- Infineon RF Bipolar Transistor 20 V, 3-Pin SOT-323
- Infineon BFR181WH6327XTSA1 RF Bipolar Transistor 20 V, 3-Pin SOT-323
- Infineon RF Bipolar Transistor 20 V, 3-Pin SOT-323
- Infineon BFR182WH6327XTSA1 RF Bipolar Transistor 20 V, 3-Pin SOT-323
- Infineon RF Bipolar Transistor 20 V, 3-Pin SOT-323