Infineon Bipolar Transistor, 20 mA NPN, 20 V, 4-Pin SOT-143
- RS庫存編號:
- 258-7682P
- 製造零件編號:
- BFP181E7764HTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計 50 件 (按連續帶提供)*
TWD200.00
(不含稅)
TWD210.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月17日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 50 - 75 | TWD4.00 |
| 100 - 225 | TWD3.90 |
| 250 - 975 | TWD3.80 |
| 1000 + | TWD3.70 |
* 參考價格
- RS庫存編號:
- 258-7682P
- 製造零件編號:
- BFP181E7764HTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 20mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-143 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 175mW | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Transition Frequency ft | 8GHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Length | 2.9mm | |
| Standards/Approvals | RoHS | |
| Height | 1mm | |
| Series | BFP181 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 20mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-143 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 20V | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 175mW | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Transition Frequency ft 8GHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Length 2.9mm | ||
Standards/Approvals RoHS | ||
Height 1mm | ||
Series BFP181 | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is for low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications.
Qualification report according to AEC-Q101 available
Pb free RoHS compliant package