Infineon Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-143
- RS庫存編號:
- 258-6989
- 製造零件編號:
- BFP196E6327HTSA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 卷，共 3000 件）*
TWD12,300.00
(不含稅)
TWD12,900.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 9,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 9000 | TWD4.10 | TWD12,300.00 |
| 12000 - 45000 | TWD4.00 | TWD12,000.00 |
| 48000 + | TWD3.90 | TWD11,700.00 |
* 參考價格
- RS庫存編號:
- 258-6989
- 製造零件編號:
- BFP196E6327HTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 150mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-143 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Transition Frequency ft | 7.5GHz | |
| Maximum Power Dissipation Pd | 700mW | |
| Minimum Operating Temperature | -65°C | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP196 | |
| Length | 2.9mm | |
| Height | 1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 150mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-143 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Transition Frequency ft 7.5GHz | ||
Maximum Power Dissipation Pd 700mW | ||
Minimum Operating Temperature -65°C | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP196 | ||
Length 2.9mm | ||
Height 1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. This transistor is used for LNA in RF front end and wireless communications.
Power amplifier for DECT and PCN systems
Pb free RoHS compliant package
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